 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BCW30LT1 General Purpose Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol VCEO VCBO VEBO IC Value -32 -32 -5.0 -100 Unit Vdc Vdc Vdc mAdc 1 BASE COLLECTOR 3 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature (1) FR- 5 = 1.0 0.75 (2) Alumina = 0.4 0.3 Symbol PD 225 1 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 -55 to +150 mW/C C/W mW mW/C C/W C C2x SOT-23 (TO-236AB) CASE 318 STYLE 6 2 Value Unit mW 3 DEVICE MARKING 0.062 in. 0.024 in. 99.5% alumina. x = Monthly Date Code ORDERING INFORMATION Device BCW30LT1 Package SOT-23 Shipping 3000 Units/Rail (c) Semiconductor Components Industries, LLC, 1999 1 November, 1999 - Rev. 0 Publication Order Number: BCW30LT1/D BCW30LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -2.0 mAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = -100 Adc, VEB = 0) Collector-Base Breakdown Voltage (IC = -10 Adc, IC = 0) Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) Collector Cutoff Current (VCB = -32 Vdc, IE = 0) (VCB = -32 Vdc, IE = 0, TA = 100C) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO -- -- -100 -10 nAdc Adc -32 -32 -32 -5.0 -- -- -- -- Vdc Vdc Vdc Vdc ON CHARACTERISTICS DC Current Gain (IC = -2.0 mAdc, VCE = -5.0 Vdc) Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) Base-Emitter On Voltage (IC = -2.0 mAdc, VCE = -5.0 Vdc) hFE 215 VCE(sat) -- VBE(on) -0.6 -0.75 -0.3 Vdc 500 -- Vdc SMALL-SIGNAL CHARACTERISTICS Output Capacitance (IE = 0, VCB = -10 Vdc, f = 1.0 MHz) Noise Figure (IC = -0.2 mAdc, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) Cobo -- NF -- 10 7.0 dB pF http://onsemi.com 2 BCW30LT1 TYPICAL NOISE CHARACTERISTICS (VCE = - 5.0 Vdc, TA = 25C) 10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 A 30 A 3.0 2.0 1.0 mA 100 A 300 A BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 A 100 A 30 A 10 A IC = 1.0 mA BANDWIDTH = 1.0 Hz RS Figure 1. Noise Voltage Figure 2. Noise Current NOISE FIGURE CONTOURS (VCE = - 5.0 Vdc, TA = 25C) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) RS , SOURCE RESISTANCE (OHMS) BANDWIDTH = 1.0 Hz 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k Figure 3. Narrow Band, 100 Hz 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k Figure 4. Narrow Band, 1.0 kHz RS , SOURCE RESISTANCE (OHMS) 10 Hz to 15.7 kHz Noise Figure is Defined as: NF 0.5 dB 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) + 20 log10 en2 ) 4KTRS ) In 2RS2 1 2 Figure 5. Wideband http://onsemi.com 3 BCW30LT1 TYPICAL STATIC CHARACTERISTICS 500 TJ = 125C 25C h FE, DC CURRENT GAIN 300 - 55C 200 180 160 140 0.003 0.005 BCW29LT1 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 Figure 6. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 IC, COLLECTOR CURRENT (mA) TA = 25C BCW29LT1 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA 100 TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0% 300 A 60 IB = 400 A 350 A 250 A 200 A 150 A 0.6 0.4 40 100 A 50 A 0.2 20 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 7. Collector Saturation Region Figure 8. Collector Characteristics TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 - 55C to 25C 0.8 25C to 125C 1.6 25C to 125C qVB for VBE 0.2 - 55C to 25C 2.4 0.1 1.0 2.0 5.0 10 20 0.5 IC, COLLECTOR CURRENT (mA) 50 100 Figure 9. "On" Voltages Figure 10. Temperature Coefficients http://onsemi.com 4 BCW30LT1 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 -1.0 ts VCC = - 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C t, TIME (ns) tf 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 11. Turn-On Time f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 12. Turn-Off Time 500 TJ = 25C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF) 10 TJ = 25C 7.0 Cib 5.0 3.0 2.0 Cob 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current-Gain -- Bandwidth Product Figure 14. Capacitance 20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe 300 @ IC = -1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = -10 Vdc f = 1.0 kHz TA = 25C 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C hfe 300 @ IC = 1.0 mA Figure 15. Input Impedance Figure 16. Output Admittance http://onsemi.com 5 BCW30LT1 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5 0.2 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 500 1.0 k 2.0 k Figure 17. Thermal Response 104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 10-1 10-2 ICEO DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 17 by the steady state value RJA. Example: The BCW29LT1 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see AN-569. ICBO AND ICEX @ VBE(off) = 3.0 V -4 0 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (C) Figure 18. Typical Collector Leakage Current http://onsemi.com 6 BCW30LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 7 BCW30LT1 PACKAGE DIMENSIONS SOT-23 (TO-236AB) CASE 318-08 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 BS 1 2 V G C D H K J DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR Thermal Clad is a trademark of the Bergquist Company ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION North America Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 2:30pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 2:30pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 1:30pm to 5:00pm UK Time) Email: ONlit@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong 800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5487-8345 Email: r14153@onsemi.com Fax Response Line: 303-675-2167 800-344-3810 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 BCW30LT1/D |
Price & Availability of BCW30LT1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |